Abstract
This document defines a method for evaluating effective in-plane thermal conductivity and conductance of a metalized ceramic substrate bearing a heater chip as an imitation of a SiC power semiconductor. The method provides an indicator for in-plane heat transfer properties of metalized ceramic substrates employed in high-power modules.
General information
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Status: Under developmentStage: Working draft (WD) study initiated [20.20]
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Edition: 1
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Technical Committee :ISO/TC 206
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