Abstract Preview

ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.


General information

  • Status :  Published
    Publication date : 2014-08
  • Edition : 2
    Number of pages : 25
  • :
    ISO/TC 201
    Surface chemical analysis
  • 71.040.40
    Chemical analysis

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