Abstract Preview

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.


General information

  • Status :  Published
    Publication date : 2009-04
  • Edition : 1
    Number of pages : 19
  • :
    ISO/TC 201/SC 6
    Secondary ion mass spectrometry
  • 71.040.40
    Chemical analysis

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