This standard was last reviewed and confirmed in 2020.
Therefore this version remains current.
Abstract
PreviewISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
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Status: PublishedPublication date: 2014-09
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Edition: 2Number of pages: 10
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- ICS :
- 71.040.40 Chemical analysis
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| Format | Language | |
|---|---|---|
| std 1 61 | PDF + ePub | |
| std 2 61 | Paper |
- CHF61
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