Abstract Preview

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.


General information

  • Status :  Published
    Publication date : 2010-11
  • Edition : 1
    Number of pages : 13
  • :
    ISO/TC 201/SC 6
    Secondary ion mass spectrometry
  • 71.040.40
    Chemical analysis

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