ISO 14701:2011

Surface chemical analysis -- X-ray photoelectron spectroscopy -- Measurement of silicon oxide thickness

ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in the standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.


General information

  • Status :  Withdrawn
    Publication date : 2011-08
  • Edition : 1
  • :
    ISO/TC 201/SC 7
    Electron spectroscopies
  • 71.040.40
    Chemical analysis

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