Resumen
This document defines a method for evaluating effective in-plane thermal conductivity and conductance of a metalized ceramic substrate bearing a heater chip as an imitation of a SiC power semiconductor. The method provides an indicator for in-plane heat transfer properties of metalized ceramic substrates employed in high-power modules.
Informaciones generales
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Estado: En desarrolloEtapa: Cierre del periodo de observaciones [20.60]
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Edición: 1
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Comité Técnico :ISO/TC 206
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