Including analysis of gases and surface chemical analysis
Items to be displayed:
| Standard and/or project | Stage | TC |
|---|---|---|
| ISO 78-2:1999 Chemistry -- Layouts for standards -- Part 2: Methods of chemical analysis | 90.93 | ISO/TC 47/SC 1 |
| ISO 758:1976 Liquid chemical products for industrial use -- Determination of density at 20 degrees C | 90.93 | ISO/TC 47 |
| ISO 759:1981 Volatile organic liquids for industrial use -- Determination of dry residue after evaporation on water bath -- General method | 90.93 | ISO/TC 47/SC 1 |
| ISO 760:1978 Determination of water -- Karl Fischer method (General method) | 90.93 | ISO/TC 47/SC 1 |
| ISO 918:1983 Volatile organic liquids for industrial use -- Determination of distillation characteristics | 90.93 | ISO/TC 47 |
| ISO 2590:1973 General method for the determination of arsenic -- Silver diethyldithiocarbamate photometric method | 90.93 | ISO/TC 47/SC 1 |
| ISO 2718:1974 Standard layout for a method of chemical analysis by gas chromatography | 90.93 | ISO/TC 47/SC 1 |
| ISO 3165:1976 Sampling of chemical products for industrial use -- Safety in sampling | 90.93 | ISO/TC 47 |
| ISO 5790:1979 Inorganic chemical products for industrial use -- General method for determination of chloride content -- Mercurimetric method | 90.93 | ISO/TC 47/SC 1 |
| ISO/DIS 6141 Gas analysis -- Contents of certificates for calibration gas mixtures | 40.00 | ISO/TC 158 |
| ISO 6141:2000 Gas analysis -- Requirements for certificates for calibration gases and gas mixtures | 90.92 | ISO/TC 158 |
| ISO 6142:2001 Gas analysis -- Preparation of calibration gas mixtures -- Gravimetric method | 90.92 | ISO/TC 158 |
| ISO 6142:2001/Amd 1:2009 Liquid introduction | 60.60 | ISO/TC 158 |
| ISO/CD 6142-1 Gas analysis -- Preparation of calibration gas mixtures -- Part 1: Gravimetric method for Class I mixtures | 30.60 | ISO/TC 158 |
| ISO 6143:2001 Gas analysis -- Comparison methods for determining and checking the composition of calibration gas mixtures | 90.93 | ISO/TC 158 |
| ISO 6144:2003 Gas analysis -- Preparation of calibration gas mixtures -- Static volumetric method | 90.93 | ISO/TC 158 |
| ISO 6145-1:2003 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 1: Methods of calibration | 90.92 | ISO/TC 158 |
| ISO/DIS 6145-2 Gas analysis -- Preparation of calibration gas mixtures using dynamic methods -- Part 2: Volumetric pumps | 40.00 | ISO/TC 158 |
| ISO 6145-2:2001 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 2: Volumetric pumps | 90.92 | ISO/TC 158 |
| ISO 6145-4:2004 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 4: Continuous syringe injection method | 90.93 | ISO/TC 158 |
| ISO 6145-5:2009 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 5: Capillary calibration devices | 60.60 | ISO/TC 158 |
| ISO/WD 6145-6 Gas analysis -- Preparation of calibration gas mixtures using dynamic methods -- Part 6: Critical orifices | 20.20 | ISO/TC 158 |
| ISO 6145-6:2003 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 6: Critical orifices | 90.92 | ISO/TC 158 |
| ISO 6145-7:2009 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 7: Thermal mass-flow controllers | 60.60 | ISO/TC 158 |
| ISO 6145-8:2005 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 8: Diffusion method | 90.93 | ISO/TC 158 |
| ISO 6145-9:2009 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 9: Saturation method | 60.60 | ISO/TC 158 |
| ISO 6145-10:2002 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 10: Permeation method | 90.93 | ISO/TC 158 |
| ISO 6145-11:2005 Gas analysis -- Preparation of calibration gas mixtures using dynamic volumetric methods -- Part 11: Electrochemical generation | 90.93 | ISO/TC 158 |
| ISO 6206:1979 Chemical products for industrial use -- Sampling -- Vocabulary | 90.93 | ISO/TC 47 |
| ISO 6227:1982 Chemical products for industrial use -- General method for determination of chloride ions -- Potentiometric method | 90.93 | ISO/TC 47/SC 1 |
| ISO 6228:1980 Chemical products for industrial use -- General method for determination of traces of sulphur compounds, as sulphate, by reduction and titrimetry | 90.93 | ISO/TC 47/SC 1 |
| ISO 6382:1981 General method for determination of silicon content -- Reduced molybdosilicate spectrophotometric method | 90.93 | ISO/TC 47/SC 1 |
| ISO 6685:1982 Chemical products for industrial use -- General method for determination of iron content -- 1,10-Phenanthroline spectrophotometric method | 90.93 | ISO/TC 47/SC 1 |
| ISO/CD 7504 Gas analysis -- Vocabulary | 30.60 | ISO/TC 158 |
| ISO 7504:2001 Gas analysis -- Vocabulary | 90.92 | ISO/TC 158 |
| ISO 8213:1986 Chemical products for industrial use -- Sampling techniques -- Solid chemical products in the form of particles varying from powders to coarse lumps | 90.93 | ISO/TC 47 |
| ISO 10810:2010 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Guidelines for analysis | 60.60 | ISO/TC 201/SC 7 |
| ISO 11039:2012 Surface chemical analysis -- Scanning-probe microscopy -- Measurement of drift rate | 60.60 | ISO/TC 201/SC 9 |
| ISO 11505:2012 Surface chemical analysis -- General procedures for quantitative compositional depth profiling by glow discharge optical emission spectrometry | 60.60 | ISO/TC 201/SC 8 |
| ISO/CD 11775 Surface chemical analysis -- Scanning-probe microscopy -- Determination of cantilever normal spring constants | 30.99 | ISO/TC 201/SC 9 |
| ISO/DIS 11952 Surface chemical analysis -- Scanning-probe microscopy -- Determination of geometric quantities using SPM: Calibration of measuring systems | 40.99 | ISO/TC 201/SC 9 |
| ISO 12406:2010 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of arsenic in silicon | 60.60 | ISO/TC 201/SC 6 |
| ISO/CD 12963 Gas analysis -- Measurement protocols and data evaluation techniques for general analytical applications | 30.60 | ISO/TC 158 |
| ISO/DIS 13083 Surface chemical analysis - Scanning Probe Microscopy- Standards on the definition and calibration of spatial resolution of Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy | 40.20 | ISO/TC 201/SC 9 |
| ISO 13084:2011 Surface chemical analysis -- Secondary-ion mass spectrometry -- Calibration of the mass scale for a time-of-flight secondary-ion mass spectrometer | 60.60 | ISO/TC 201/SC 6 |
| ISO/DIS 13095 Surface Chemical Analysis -- Atomic force microscopy -- Procedure for in situ characterization of AFM probe shank profile used for nanostructure measurement | 40.00 | ISO/TC 201/SC 9 |
| ISO/WD TR 13096 Surface chemical analysis -- Scanning-probe microscopy -- Guidelines for the description of AFM probe properties | 20.20 | ISO/TC 201/SC 9 |
| ISO/PRF 13424 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Reporting of results of thin-film analysis | 50.00 | ISO/TC 201/SC 7 |
| ISO/TS 14167:2003 Gas analysis -- General quality assurance aspects in the use of calibration gas mixtures - Guidelines | 90.92 | ISO/TC 158 |
| ISO/TR 14187:2011 Surface chemical analysis -- Characterization of nanostructured materials | 60.60 | ISO/TC 201/SC 7 |
| ISO 14237:2010 Surface chemical analysis -- Secondary-ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped materials | 60.60 | ISO/TC 201/SC 6 |
| ISO 14606:2000 Surface chemical analysis -- Sputter depth profiling -- Optimization using layered systems as reference materials | 90.92 | ISO/TC 201/SC 4 |
| ISO/DIS 14606 Surface chemical analysis -- Sputter depth profiling -- Optimization using layered systems as reference materials | 40.99 | ISO/TC 201/SC 4 |
| ISO 14701:2011 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Measurement of silicon oxide thickness | 60.60 | ISO/TC 201/SC 7 |
| ISO/DIS 14706 Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy | 40.00 | ISO/TC 201 |
| ISO 14706:2000 Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy | 90.92 | ISO/TC 201 |
| ISO/WD 14707 Surface chemical analysis -- Glow discharge optical emission spectrometry (GD-OES) -- Introduction to use | 20.20 | ISO/TC 201/SC 8 |
| ISO 14707:2000 Surface chemical analysis -- Glow discharge optical emission spectrometry (GD-OES) -- Introduction to use | 90.92 | ISO/TC 201/SC 8 |
| ISO 14912:2003 Gas analysis -- Conversion of gas mixture composition data | 90.92 | ISO/TC 158 |
| ISO 14912:2003/Cor 1:2006 | 60.60 | ISO/TC 158 |
| ISO 14975:2000 Surface chemical analysis -- Information formats | 90.93 | ISO/TC 201/SC 3 |
| ISO 14976:1998 Surface chemical analysis -- Data transfer format | 90.93 | ISO/TC 201/SC 3 |
| ISO/TS 15338:2009 Surface chemical analysis -- Glow discharge mass spectrometry (GD-MS) -- Introduction to use | 90.93 | ISO/TC 201/SC 8 |
| ISO 15470:2004 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Description of selected instrumental performance parameters | 90.93 | ISO/TC 201/SC 7 |
| ISO 15471:2004 Surface chemical analysis -- Auger electron spectroscopy -- Description of selected instrumental performance parameters | 90.93 | ISO/TC 201/SC 7 |
| ISO 15472:2010 Surface chemical analysis -- X-ray photoelectron spectrometers -- Calibration of energy scales | 60.60 | ISO/TC 201/SC 7 |
| ISO 15796:2005 Gas analysis -- Investigation and treatment of analytical bias | 90.93 | ISO/TC 158 |
| ISO/TR 15969:2001 Surface chemical analysis -- Depth profiling -- Measurement of sputtered depth | 60.60 | ISO/TC 201/SC 4 |
| ISO 16129:2012 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer | 60.60 | ISO/TC 201/SC 7 |
| ISO 16242:2011 Surface chemical analysis -- Recording and reporting data in Auger electron spectroscopy (AES) | 60.60 | ISO/TC 201/SC 2 |
| ISO 16243:2011 Surface chemical analysis -- Recording and reporting data in X-ray photoelectron spectroscopy (XPS) | 60.60 | ISO/TC 201/SC 2 |
| ISO/TR 16268:2009 Surface chemical analysis -- Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation | 60.60 | ISO/TC 201/SC 2 |
| ISO 16413:2013 Evaluation of thickness, density and interface width of thin films by X-ray reflectometry -- Instrumental requirements, alignment and positioning, data collection, data analysis and reporting | 60.60 | ISO/TC 201 |
| ISO 16531:2013 Surface chemical analysis -- Depth profiling -- Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS | 60.60 | ISO/TC 201/SC 4 |
| ISO 16664:2004 Gas analysis -- Handling of calibration gases and gas mixtures -- Guidelines | 90.93 | ISO/TC 158 |
| ISO 16962:2005 Surface chemical analysis -- Analysis of zinc- and/or aluminium-based metallic coatings by glow-discharge optical-emission spectrometry | 90.93 | ISO/TC 201/SC 8 |
| ISO/WD 17109 Surface chemical analysis -- Depth profiling -- A method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using multi-layer thin films | 20.60 | ISO/TC 201/SC 4 |
| ISO 17331:2004 Surface chemical analysis -- Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy | 90.20 | ISO/TC 201 |
| ISO 17331:2004/Amd 1:2010 | 60.60 | ISO/TC 201 |
| ISO 17560:2002 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of boron in silicon | 90.20 | ISO/TC 201/SC 6 |
| ISO/DIS 17862 Surface chemical analysis - Secondary ion mass spectrometry -- Linearity of intensity scale in single ion counting time-of-flight mass analysers | 40.20 | ISO/TC 201/SC 6 |
| ISO 17973:2002 Surface chemical analysis -- Medium-resolution Auger electron spectrometers -- Calibration of energy scales for elemental analysis | 90.93 | ISO/TC 201/SC 7 |
| ISO 17974:2002 Surface chemical analysis -- High-resolution Auger electron spectrometers -- Calibration of energy scales for elemental and chemical-state analysis | 90.93 | ISO/TC 201/SC 7 |
| ISO/WD 17980 Surface chemical analysis -- Surface characterization methods to measure surface properties of biomaterials and corresponding biointeractions | 20.60 | ISO/TC 201 |
| ISO 18114:2003 Surface chemical analysis -- Secondary-ion mass spectrometry -- Determination of relative sensitivity factors from ion-implanted reference materials | 90.93 | ISO/TC 201/SC 6 |
| ISO/FDIS 18115-1 Surface chemical analysis -- Vocabulary -- Part 1: General terms and terms used in spectroscopy | 50.00 | ISO/TC 201/SC 1 |
| ISO 18115-1:2010 Surface chemical analysis -- Vocabulary -- Part 1: General terms and terms used in spectroscopy | 90.92 | ISO/TC 201/SC 1 |
| ISO 18115-2:2010 Surface chemical analysis -- Vocabulary -- Part 2: Terms used in scanning-probe microscopy | 90.92 | ISO/TC 201/SC 1 |
| ISO/FDIS 18115-2 Surface chemical analysis -- Vocabulary -- Part 2: Terms used in scanning-probe microscopy | 50.00 | ISO/TC 201/SC 1 |
| ISO 18116:2005 Surface chemical analysis -- Guidelines for preparation and mounting of specimens for analysis | 90.93 | ISO/TC 201/SC 2 |
| ISO 18117:2009 Surface chemical analysis -- Handling of specimens prior to analysis | 60.60 | ISO/TC 201/SC 2 |
| ISO 18118:2004 Surface chemical analysis -- Auger electron spectroscopy and X-ray photoelectron spectroscopy -- Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials | 90.93 | ISO/TC 201/SC 7 |
| ISO/WD 18337 Surface chemical analysis -- Measurement of lateral resolution of confocal fluorescence microscope | 20.20 | ISO/TC 201 |
| ISO/TR 18392:2005 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Procedures for determining backgrounds | 60.60 | ISO/TC 201/SC 7 |
| ISO/TR 18394:2006 Surface chemical analysis -- Auger electron spectroscopy -- Derivation of chemical information | 60.60 | ISO/TC 201/SC 7 |
| ISO/WD TS 18507 Surface Chemical Analysis - Technical Specification for the use of Total Reflection X-ray Fluorescence spectroscopy in biological and environmental analysis | 20.20 | ISO/TC 201 |
| ISO 18516:2006 Surface chemical analysis -- Auger electron spectroscopy and X-ray photoelectron spectroscopy -- Determination of lateral resolution | 90.92 | ISO/TC 201/SC 2 |
| ISO 19318:2004 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Reporting of methods used for charge control and charge correction | 90.93 | ISO/TC 201/SC 7 |
| ISO/TR 19319:2013 Surface chemical analysis -- Fundamental approaches to determination of lateral resolution and sharpness in beam-based methods | 60.60 | ISO/TC 201/SC 2 |
| ISO 20341:2003 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for estimating depth resolution parameters with multiple delta-layer reference materials | 90.93 | ISO/TC 201/SC 6 |
| ISO 20903:2011 Surface chemical analysis -- Auger electron spectroscopy and X-ray photoelectron spectroscopy -- Methods used to determine peak intensities and information required when reporting results | 60.60 | ISO/TC 201/SC 7 |
| ISO 21079-1:2008 Chemical analysis of refractories containing alumina, zirconia and silica -- Refractories containing 5 percent to 45 percent of ZrO2 (alternative to the X-ray fluorescence method) -- Part 1: Apparatus, reagents and dissolution | 90.93 | ISO/TC 33 |
| ISO 21079-2:2008 Chemical analysis of refractories containing alumina, zirconia, and silica -- Refractories containing 5 percent to 45 percent of ZrO2 (alternative to the X-ray fluorescence method) -- Part 2: Wet chemical analysis | 90.93 | ISO/TC 33 |
| ISO 21079-3:2008 Chemical analysis of refractories containing alumina, zirconia, and silica -- Refractories containing 5 percent to 45 percent of ZrO2 (alternative to the X-ray fluorescence method) -- Part 3: Flame atomic absorption spectrophotometry (FAAS) and inductively coupled plasma emission spectrometry (ICP -AES) | 90.93 | ISO/TC 33 |
| ISO 21270:2004 Surface chemical analysis -- X-ray photoelectron and Auger electron spectrometers -- Linearity of intensity scale | 90.93 | ISO/TC 201/SC 7 |
| ISO 22048:2004 Surface chemical analysis -- Information format for static secondary-ion mass spectrometry | 90.93 | ISO/TC 201/SC 3 |
| ISO/TR 22335:2007 Surface chemical analysis -- Depth profiling -- Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer | 60.60 | ISO/TC 201/SC 4 |
| ISO 23812:2009 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth calibration for silicon using multiple delta-layer reference materials | 60.60 | ISO/TC 201/SC 6 |
| ISO 23830:2008 Surface chemical analysis -- Secondary-ion mass spectrometry -- Repeatability and constancy of the relative-intensity scale in static secondary-ion mass spectrometry | 90.93 | ISO/TC 201/SC 6 |
| ISO 24236:2005 Surface chemical analysis -- Auger electron spectroscopy -- Repeatability and constancy of intensity scale | 90.93 | ISO/TC 201/SC 7 |
| ISO 24237:2005 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Repeatability and constancy of intensity scale | 90.93 | ISO/TC 201/SC 7 |
| ISO/TS 25138:2010 Surface chemical analysis -- Analysis of metal oxide films by glow-discharge optical-emission spectrometry | 60.60 | ISO/TC 201/SC 8 |
| ISO 27911:2011 Surface chemical analysis -- Scanning-probe microscopy -- Definition and calibration of the lateral resolution of a near-field optical microscope | 60.60 | ISO/TC 201/SC 9 |
| ISO 28600:2011 Surface chemical analysis -- Data transfer format for scanning-probe microscopy | 60.60 | ISO/TC 201/SC 3 |
| ISO/TS 29041:2008 Gas mixtures -- Gravimetric preparation -- Mastering correlations in composition | 90.93 | ISO/TC 158 |
| ISO/TS 29041:2008/Cor 1:2009 | 60.60 | ISO/TC 158 |
| ISO 29081:2010 Surface chemical analysis -- Auger electron spectroscopy -- Reporting of methods used for charge control and charge correction | 60.60 | ISO/TC 201/SC 7 |
