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ISO 23812:2009
Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth calibration for silicon using multiple delta-layer reference materials
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Abstract
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
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Edition: 1 (Monolingual) ICS: 71.040.40 Status: Published Stage: 60.60 (2009-04-08) TC/SC: ISO/TC 201/SC 6 Number of Pages: 19 -
No revision information available
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No corrigenda or amendments available
